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november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxm3lm overvoltage protector series TISP4070M3LM thru tisp4115m3lm, tisp4125m3lm thru tisp4220m3lm, tisp4240m3lm thru tisp4400m3lm bidirectional thyristor overvoltage protectors summary current ratings summary electrical characteristics tisp4xxxm3lm overview this tisp device series protects central office, access and customer premise equipment against overvoltages on the telecom line. the tisp4xxxm3lm is available in a wide range of voltages and has a medium current capability. these protectors have been specified mindful of the following standards and recommendations: gr-1089-core, fcc part 68, ul1950, en 60950, iec 60950, itu-t k.20, k.21 and k.45. the tisp4350m3lm meets the fcc part 68 ??ringer voltage requirement and survives the type b impulse tests. these devices are hous ed in a through-hole do-92 package (to-92 package with cropped center leg). part # v drm v v (bo) v v t @ i t v i drm a i (bo) ma i t a i h ma c o @ -2 v pf functionally replaces tisp4070m3 58 70 3 5 600 5 150 120 p0640ea tisp4080m3 65 80 3 5 600 5 150 120 p0720ea tisp4095m3 75 95 3 5 600 5 150 120 p0900ea tisp4115m3 90 115 3 5 600 5 150 120 p1100ea tisp4125m3 100 125 3 5 600 5 150 65 tisp4145m3 120 145 3 5 600 5 150 65 p1300ea tisp4165m3 135 165 3 5 600 5 150 65 tisp4180m3 145 180 3 5 600 5 150 65 p1500ea tisp4220m3 160 220 3 5 600 5 150 65 p1800ea tisp4240m3 180 240 3 5 600 5 150 55 tisp4250m3 190 250 3 5 600 5 150 55 p2300ea tisp4260m3 200 260 3 5 600 5 150 55 tisp4290m3 220 290 3 5 600 5 150 55 p2600ea tisp4300m3 230 300 3 5 600 5 150 55 tisp4350m3 275 350 3 5 600 5 150 55 p3100ea tisp4395m3 320 395 3 5 600 5 150 55 p3500ea tisp4400m3 300 400 3 5 600 5 150 55 b ourns?part has an improved protection voltage parameter i tsp a i tsm a di/dt a/ s waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 hz 2/10 wavefront value 300 220 120 100 75 50 32 300 *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l i a n t
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t r sd4xaa terminals t and r correspond to the alternative line designators of a and b lmf package (lm package with formed leads) (top view) waveshape standard i tsp a 2/10 s gr-1089-core 300 8/20 s iec 61000-4-5 220 10/160 s fcc part 68 120 10/700 s itu-t k.20/21 fcc part 68 100 10/560 s fcc part 68 75 10/1000 s gr-1089-core 50 how to order lm package (top view) ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes device symbol description tisp4xxxm3lm overvoltage protector series itu-t k.20/21 rating ...........................4 kv 10/700,100 a 5/310 these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system o r lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combi nations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). low differential capacitance .................................. 43 pf max. .............................................. ul recognized component nc - no internal connection on pin 2 nc t(a) r(b) md4xat 1 2 3 nc - no internal connection on pin 2 nc t(a) r(b) md4xakb 1 2 3 device package carrier tisp4xxxm3lm straight lead do-92 (lm) bulk pack tape and reeled formed lead do-92 (lmf) tape and reeled tisp4xxxm3lm-s tisp4xxxm3lmr-s tisp4xxxm3lmfr -s insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc. order as device v drm v v (bo) v ?4070 58 70 ?4080 65 80 ?4095 75 95 ?4115 90 115 ?4125 100 125 ?4145 120 145 ?4165 135 165 ?4180 145 180 ?4220 160 220 ?4240 180 240 ?4250 190 250 ?4260 200 260 ?4290 220 290 ?4300 230 300 ?4350 275 350 ?4395 320 395 ?4400 300 400
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. description (continued) tisp4xxxm3lm overvoltage protector series rating symbol value unit repetitive peak off-state voltage, (see note 1) ?4070 ?4080 ?4095 ?4115 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4250 ?4260 ?4290 ?4300 ?4350 ?4395 ?4400 v drm 58 65 75 90 100 120 135 145 160 180 190 200 220 230 275 320 300 v non-repetitive peak on-state pulse current (see notes 2, 3 and 4) i tsp a 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 300 8/20 s (iec 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220 10/160 s (fcc part 68, 10/160 s voltage wave shape) 120 5/200 s (vde 0433, 10/700 s voltage wave shape) 110 0.2/310 s (i 31-24, 0.5/700 s voltage wave shape) 100 5/310 s (itu-t k.20/21, 10/700 s voltage wave shape) 100 5/310 s (ftz r12, 10/700 s voltage wave shape) 100 5/320 s (fcc part 68, 9/720 s voltage wave shape) 100 10/560 s (fcc part 68, 10/560 s voltage wave shape) 75 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) 50 non-repetitive peak on-state current (see notes 2, 3 and 5) i tsm 30 32 2.1 a 20 ms (50 hz) full sine wave 16.7 ms (60 hz) full sine wave 1000 s 50 hz/60 hz a.c. initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 100 a di t /dt 300 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. see applications information and figure 10 for voltage values at lower temperatures. 2. initially the tisp4xxxm3lm must be in thermal equilibrium with t j =25 c. 3. the surge may be repeated after the tisp4xxxm3lm returns to its initial conditions. 4. see applications information and figure 11 for current ratings at other temperatures. 5. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 8 for the current ratings at other durations. derate current values at -0.61 %/ c for ambient temperatures above 25 c absolute maximum ratings, t a = 25 c (unless otherwise noted) the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. this tisp4xxxm3lm range consists of seventeen voltage variants to meet various maximum system voltage levels (58 v to 320 v). t hey are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these protection device s are supplied in a do-92 (lm) cylindrical plastic package. the tisp4xxxm3lm is a straight lead do-92 supplied in bulk pack and on tape and reel. t he tisp4xxxm3lmf is a formed lead do-92 supplied only on tape and reel. for higher rated impulse currents in the do-92 package, th e 100 a 10/1000 tisp4xxxh3lm series is available.
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 750 v/ms, r source = 300 ? ?
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. thermal characteristics tisp4xxxm3lm overvoltage protector series electrical characteristics, t a = 25 c (unless otherwise noted) (continued) c off off-state capacitance f = 100 khz, v d =1v rms, v d =0, f = 100 khz, v d =1v rms, v d =-1v f = 100 khz, v d =1v rms, v d =-2v f = 100 khz, v d =1v rms, v d =-50v f = 100 khz, v d =1v rms, v d = -100 v (see note 6) 4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4125 thru ?4220 ?4240 thru ?4400 86 60 54 80 56 50 74 52 46 36 26 20 20 16 110 80 70 96 74 64 90 70 60 47 36 30 30 24 pf note 6: to avoid possible voltage clipping, the ?4125 is tested with v d =-98v. parameter test conditions min typ max unit parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 7) 120 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) , t a = 25 c 57 note 7: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp4xxxm3lm overvoltage protector series figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaab v drm i drm
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics tisp4xxxm3lm overvoltage protector series figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 0001 001 01 1 10 100 tcmag v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakover voltage 0.95 1.00 1.05 1.10 tc4maf v t - on-state voltage - v 0.7 1.5 2 3 4 5 7 110 i t - on-state current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 1 10 100 t a = 25 c t w = 100 s tc4maja '4240 thru '4400 '4125 thru '4220 '4070 thru '4115 t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4mad off-state current vs junction temperature normalized breakover voltage vs junction temperature on-state current vs on-state voltage normalized holding current vs junction temperature
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics tisp4xxxm3lm overvoltage protector series figure 6. figure 7. v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25 ?c v d = 1 vrms tc4maka '4240 thru '4400 '4125 thru '4220 '4070 thru '4115 v drm - repetitive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 100 c - differential off-state capacitance - pf 25 30 35 40 45 50 c = c off(-2 v) - c off(-50 v) tc4malb '4070 '4080 '4095 '4125 '4145 '4165 '4180 '4260 '4300 '4350 '4400 '4240 '4115 ' 4220 ' 4250 '4290 '4395 normalized capacitance vs off-state voltage differential off-state capacitance vs rated repetitive peak off-state voltage
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. rating and thermal information tisp4xxxm3lm overvoltage protector series figure 8. figure 9. figure 10. figure 11. t - current duration - s 01 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c t - power duration - s 01 1 10 100 1000 z
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. deployment tisp4xxxm3lm overvoltage protector series applications information these devices are two terminal overvoltage protectors. they may be used either singly to limit the voltage between two conducto rs (figure 12) or in multiples to limit the voltage at several points in a circuit (figure 13). in figure 12, protector th1 limits the maximum voltage between the two conductors to v (bo) . this configuration is normally used to protect circuits without a ground reference, such as modems. in figure 13, protectors th2 and th3 limit the maximum voltage between eac h conduc- tor and ground to the v (bo) of the individual protector. protector th1 limits the maximum voltage between the two conductors to its v (bo) value. if the equipment being protected has all its vulnerable components connected between the conductors and ground, then pro tector th1 is not required. impulse testing to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various imp ulse wave forms. the table below shows some common values . if the impulse generator current exceeds the protector?s current rating, then a series resistance can be used to reduce the cur rent to the protector?s rated value to prevent possible failure. the required value of series resistance for a given waveform is given by t he following calculations. first, the minimum total circuit impedance is found by dividing the impulse generator?s peak voltage by the prote ctor?s rated current. the impulse generator?s fictive impedance (generator?s peak voltage divided by peak short circuit current) is then sub tracted from the minimum total circuit impedance to give the required value of series resistance. for the fcc part 68 10/560 waveform the following values result. the minimum total circuit impedance is 800/75 = 10.7 ? ? ? ? ?
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. ac power testing tisp4xxxm3lm overvoltage protector series capacitance normal system voltage levels jesd51 thermal measurement method applications information the protector can withstand currents applied for times not exceeding those shown in figure 8. currents that exceed these times must be terminated or reduced to avoid protector failure. fuses, ptc (positive temperature coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. protective fuses may range from a few hundred milliamperes to one ampere. in some cases, it may be necessary to add some extra series resistance to prevent the fuse from opening during impulse testing. the current versus time characteristic of the overcurrent protector must be below the line shown in figure 8. in some cases there may be a further time limit imposed by the test standard (e.g. ul 1459 wiring simulator failure). the protector characteristic off-state capacitance values are given for d.c. bias voltage, v d , values of 0, -1 v, -2 v and -50 v. where possible, values are also given for -100 v. values for other voltages may be calculated by multiplying the v d = 0 capacitance value by the factor given in figure 6. up to 10 mhz, the capacitance is essentially independent of frequency. above 10 mhz, the effective capacitance is str ongly dependent on connection inductance. in many applications, such as figure 15 and figure 17, the typical conductor bias voltages will be about -2 v and -50 v. figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 v and the ot her at -50 v. the protector should not clip or limit the voltages that occur in normal system operation. for unusual conditions, such as ring ing without the line connected, some degree of clipping is permissible. under this condition, about 10 v of clipping is normally possible witho ut activating the ring trip circuit. figure 10 allows the calculation of the protector v drm value at temperatures below 25 c. the calculated value should not be less than the maximum normal system voltages. the tisp4260m3lm, with a v drm of 200 v, can be used for the protection of ring generators producing 100 v rms of ring on a battery voltage of -58 v (th2 and th3 in figure 17). the peak ring voltage will be 58 + 1.414*100 = 199. 4 v. however, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. in the extreme case of an unconnected line, clipping the peak voltage to 190 v should not activate the ring trip. this level of clipping would occur at t he temperature when the v drm has reduced to 190/200 = 0.95 of its 25 c value. figure 10 shows that this condition will occur at an ambient temperature of -28 c. in this example, the tisp4260m3lm will allow normal equipment operation provided that the minimum expected ambient temperatu re does not fall below -28 c. to standardize thermal measurements, the eia (electronic industries alliance) has created the jesd51 standard. part 2 of the st andard (jesd51-2, 1995) describes the test environment. this is a 0.0283 m 3 (1 ft 3 ) cube which contains the test pcb (printed circuit board) horizontally mounted at the center. part 3 of the standard (jesd51-3, 1996) defines two test pcbs for surface mount components; one for packages smaller than 27 mm (1.06 ??) on a side and the other for packages up to 48 mm (1.89 ??). the lm package measurements u sed the smaller 76.2 mm x 114.3 mm (3.0 ?? x 4.5 ??) pcb. the jesd51-3 pcbs are designed to have low effective thermal conductivity (hi gh thermal resistance) and represent a worse case condition. the pcbs used in the majority of applications will achieve lower values of th ermal resistance and so can dissipate higher power levels than indicated by the jesd51 values.
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxm3lm overvoltage protector series typical circuits figure 14. modem inter-wire protection figure 15. protection module figure 16. isdn protection figure 17. line card ring/test protection fuse tisp4350 or tisp4400 ai6xbm ring detector hook switch d.c. sink signal modem ring wire tip wire r1a r1b ring wire tip wire th3 th2 th1 protected equipment e.g. l ine card ai6xbk r1a r1b th3 th2 th1 ai6xbl signal d.c. test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th3 th2 th1 th4 th5 slic slic protection ring/test protection over- current protection s2a s2b s3a s3b v bat c1 220 nf ai6xbj tisp6xxxx, tisppblx, 1/2tisp6ntp2
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. device symbolization code device symbolization code TISP4070M3LM 4070m3 tisp4080m3lm 4080m3 tisp4095m3lm 4095m3 tisp4115m3lm 4115m3 tisp4125m3lm 4125m3 tisp4145m3lm 4145m3 tisp4165m3lm 4165m3 tisp4180m3lm 4180m3 tisp4220m3lm 4220m3 tisp4240m3lm 4240m3 tisp4250m3lm 4250m3 tisp4260m3lm 4260m3 tisp4290m3lm 4290m3 tisp4300m3lm 4300m3 tisp4350m3lm 4350m3 tisp4395m3lm 4395m3 tisp4400m3lm 4400m3 mechanical data carrier information tisp4xxxm3lm overvoltage protector series devices will be coded as below. devices are shipped in one of the carriers below. a reel contains 2000 devices. package type carrier straight lead do-92 bulk pack straight lead do-92 tape and reeled formed lead do-92 tape and reeled tisp4xxxm3lm-s tisp4xxxm3lmr-s tisp4xxxm3lmfr -s order as tisp is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. bourns is a registered trademark of bourns, inc. in the u.s. and other countries.

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